Renesas Technology has revealed more details of its capacitor-less, twin-transistor RAM that can be built in a standard silicon-on-insulator (SOI) CMOS process and reduces power and cell size compared ...
Tokyo, Japan – In a development that could have significant impact of a wide range of memory-intensive embedded System-on-Chip designs, Renesas Technology Corp. today announced that it has built a ...
Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
For 65nm and later-generation processes, the advanced memory has achieved fast operation (250MHz) and low active power (148mW) in a 2Mbit test chip TOKYO, September 26, 2005 -- Renesas Technology Corp ...
OTTAWA & TOKYO--May 31, 2006--Renesas Technology Corp., the world's leading microcontroller company, and Emerging Memory Technologies Inc. (EMT), a worldwide leader in embedded memory intellectual ...
As it turns out, the answer is not 42, it’s 42.3 — thousand. That’s how many discrete transistors spread across the 30 m 2 room housing this massive computation machine. [James Newman’s] Megaprocessor ...
SUNNYVALE, CA. - DEC. 9, 2002 - Demonstrating its leadership in semiconductor research and development (R&D), AMD will present several new technical achievements critical to the creation of ...
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