Centre for III-Nitride Technology (C3NiT) has the following research output in the current window (1 December 2024 - 30 November 2025) of the Nature Index. Click on Count to view a list of articles ...
A new publication from Opto-Electronic Advances, 10.29026/oes.2022.220016 discusses large-scale and high-quality III-nitride membranes through microcavity-assisted crack propagation by engineering ...
Collaborative review unveils the potential of graphene in advancing nitride semiconductor technology
In a comprehensive review, researchers from Soochow University, Beijing Graphene Institute and Xiamen Silan Advanced Compound Semiconductor Co., Ltd. have collaborated to provide a systematic overview ...
Researchers have developed a new process that makes use of existing industry standard techniques for making III-nitride semiconductor materials, but results in layered materials that will make LEDs ...
Stanley Electric has been granted a patent for group-III nitride nanoparticles that improve luminous efficiency by preventing strains on the nanoparticles. The nanoparticles have a unique structure, ...
Researchers from Xiamen Silan Advanced Compound Semiconductor Co., Ltd., Beijing Graphene Institute, and Soochow University have worked together to provide a thorough review that presents a methodical ...
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