The new W-gated Trench MOSFET offers better trade-off between on-resistance and gate-drain capacitance. Mohamed Darwish, Vishay Siliconix, Santa Clara, Calif. Power demands of computing and telecom ...
Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
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