OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it will launch the industry's smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaN TM)** package.
EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...
ROHM product achieves industry-leading device performance metrics among GaN HEMTs in the TOLL package · GlobeNewswire Inc. Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM ...
Rugged, cool, extended-power performance with world’s most protected GaN power semiconductor in thermally-enhanced TOLT package. · GlobeNewswire Inc. TORRANCE, Calif., Oct. 09, 2024 (GLOBE NEWSWIRE) - ...
Gallium nitride (GaN) HEMT based power transistors are fast becoming adopted for many high power amplifier applications from CW to pulsed or modulated requirements. The key advantage of GaN HEMT ...
STMicroelectronics has unveiled MasterGaN, the first platform that embeds a half-bridge driver based on silicon technology along with a pair of gallium-nitride (GaN) transistors. According to ST, this ...
PHOENIX--(BUSINESS WIRE)--Freescale Semiconductor [NYSE: FSL], the global leader in radio frequency (RF) power transistors, today introduced two ultra-wideband RF power gallium nitride (GaN) ...
Editor’s note: The following white paper is from an IMAPS conference in 2014 in San Diego presented by GaN Systems and AT&S. We were just granted permission to publish this paper. Large GaN ...
Panasonic Corporation today announced that it will launch the industry’s smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaN TM)** package. The GaN is encapsulated into 8×8 ...
Panasonic Corporation today announced that it will launch the industry´s smallest enhancement-mode [1] gallium nitride (GaN) [2] power transistors (X-GaN TM)** package. The GaN is encapsulated into ...
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