onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, ...
SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
Santa Clara, CA and Kyoto, Japan, Dec. 10, 2024 (GLOBE NEWSWIRE) -- ROHM Co., Ltd. (ROHM) today announced that they have entered into a strategic partnership with TSMC on the development and volume ...
Engineers develop GaN semiconductors, liquid cooling systems and chiplet packaging to handle growing AI power demands in data ...
Japan-based Rohm Semiconductor and Taiwan Semiconductor Manufacturing Company (TSMC) have announced a strategic partnership to advance the development and mass production of gallium nitride (GaN) ...
BALTIMORE, June 7, 2011 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound ...
Taiwanese pure-play foundry WIN Semiconductors has announced the beta release of its robust mmWave GaN-on-SiC technology, NP12-0B. At the core of this platform is a 0.12-µm gate RF GaN HEMT process ...
For nearly two decades, gallium nitride (GaN) semiconductor technology has been exposed to herald a paradigm shift in RF power capability. Though all of these promises haven’t materialized yet, GaN ...
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