NORWOOD, Mass.--(BUSINESS WIRE)--Analog Devices, Inc. today announced a pair of high-performance gallium nitride (GaN) power amplifier (PA) modules which offer one of the highest power-density levels ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Gallium Nitride (GaN) power amplifier module for use in 5G massive ...

Compact, high-efficiency module will enhance installation ease and power efficiency Mitsubishi Electric developed its 7GHz GaN PAM using proprietary matching-circuit technology and high-performance ...

Empower RF Systems has announced the release of its latest C-UAS RF amplifier module, Model 1211, engineered for robust ...

LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...

A 650-V GaN intelligent power module (IPM) from TI enables up to 99% inverter efficiency for major home appliances and HVAC systems. The DRV7308 IPM integrates 650-V, 205-mΩ e-mode GaN FETs in a half ...

5G technology has led to the introduction of a significant number of new RF features that need to be implemented in mobile networks while considering stringent constraints in board space and power ...

Despite all of the justified attention given to the part of gigahertz spectrum ranging from upper single-digit, lower double-digit, and even higher frequencies, there’s still lots of important ...

TOKYO, March 18, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power ...

TOKYO, June 12, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a world’s first compact 7GHz band gallium nitride (GaN) power amplifier ...