At the same time, the semiconductor industry has been moving toward 200 mm (8-inch) wafers to improve manufacturing ...
Runxian Xing, Hongyang Guo, Bohan Guo, Guohao Yu, Ping Zhang, Jia’an Zhou, An Yang, Yu Li, Chunfeng Hao, Huixin Yue, Zhongming Zeng, Xinping Zhang, Baoshun Zhang ...
NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...
In various power conversion and power delivery applications, GaN HEMTs are leading the way in developing new possibilities and displacing Si-based systems. The main features of several of the most ...
Wolfspeed, a global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has extended its family of 50-V unmatched GaN HEMT RF power ...
Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode ...
Recently, much attention has been paid to the commercial advent of 600 V rated GaN-on-Si based power devices [1,2]. This is, in part, due to the many obvious advantages of such devices over their ...
Innoscience Technology, a developer of gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced a full range of 650V E-mode GaN HEMT devices. New devices added to its portfolio include: ...
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