KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...

Toshiba has begun volume shipping of the MG250YD2YMS3, a dual SiC MOSFET module with a drain-source voltage rating of 2200 V for use in industrial equipment. Intended for 1500-VDC applications, such ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...

Fairchild Semiconductor introduced the FDPC8011S, a 25V, 3.3x3.3mm², low-profile Dual Power Clip Asymmetric N-Channel Module. Fairchild Semiconductor introduced the FDPC8011S, a 25V, 3.3x3.3mm², ...

Powerex has created with a low profile and multiple circuit topologies, including independent; dual; in parallel; common collector; and common emitter, two new Powerex split dual SiC MOSFET Modules ...

Fairchild Semiconductor (NYSE: FCS) brings designers an industry-leading, dual MOSFET solution that delivers higher efficiency and power density for notebooks, netbooks, servers, telecom and other ...

The module features the enhanced first-generation M1H chip, integrated NTC temperature sensor, and PressFIT pins. It is available in two variants: - A TIM (Thermal Interface Material) pre-applied ...

Intended for use in 1500V DC applications such as photovoltaic (PV) inverters, electric vehicle (EV) chargers, high frequency DC/DC converters and energy storage systems, the device is intended to ...

Toshiba Electronics Europe has leveraged its expertise in wide bandgap (WBG) semiconductor processes to introduce a compact but efficient MOSFET module. The MG800FXF2YMS3 incorporates 3300V-rated dual ...

ON Semiconductor has brought out a pair of 1200V SiC MOSFET 2-PACK modules for the EV charger market. EC charging stations require power levels in excess of 350 kW with efficiencies of 95% becoming ...